Gartner Research

Emerging Technology Analysis: STT-MRAM Targeting Memory in Portable Applications

Published: 18 January 2012

ID: G00223266

Analyst(s): Ben Lee , Brady Wang , Jim Tully

Summary

Spin-transfer torque magnetic random-access memory is a good candidate as a universal memory because of its non-volatility, low power consumption, reliability and fast read/write speed. Despite its potential, however, it is still at the prototype stage and faces some challenges.

Table Of Contents
  • Overview

Analysis

  • Technology Description
  • The Pros of STT-MRAM
  • The Cons of STT-MRAM
  • Industry Players
  • Technology Adoption
    • Factors Driving Adoption
    • Factors Inhibiting Adoption
  • Technology Impacts
    • What Actions Should Vendors Take?

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