Market Focus: MRAM as a Universal Semiconductor Memory Technology
Published: 31 March 2005
Magnetoresistive random-access memory shows promise as a universal semiconductor memory technology, but cost competitiveness, not compelling performance attributes, will determine whether MRAM technology can achieve widespread adoption and significant market penetration.
Table Of Contents
- Executive Summary
- MRAM Fundamentals
- Electron Spin
- MRAM Technology Description and Overview
- Early MRAM Integrated Circuits
- Pseudo Spin Valve MRAM Devices
- Spin-Dependent Tunneling MRAM Devices
- 2-D Vs. 1-D Memory Cell Switching
- Magnetic Tunnel Junction MRAM Devices
- Semiconductor Memory Technology Comparisons
- Choosing a Semiconductor Memory Technology
- Existing and Emerging Memory Technologies
- MRAM Market Opportunity
- MRAM as a Disruptive Technology
- Memory Market Creation Strategies
- MRAM Players
- Altis Semiconductor
- Crocus Technology
- Defense Advanced Research Projects Agency
- Freescale Semiconductor
- Silicon Magnetic Systems
- Samsung Advanced Institute of Technology
- TSMC/Electronics Research and Service Organization/Industrial Technology Research Institute
- Glossary of Terms
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