Gartner Research

Market Focus: MRAM as a Universal Semiconductor Memory Technology

Published: 31 March 2005

ID: G00126923

Analyst(s): Richard Gordon

Summary

Magnetoresistive random-access memory shows promise as a universal semiconductor memory technology, but cost competitiveness, not compelling performance attributes, will determine whether MRAM technology can achieve widespread adoption and significant market penetration.

Table Of Contents
  • Executive Summary
  • MRAM Fundamentals
    • Electron Spin
    • Magnetoresistance
  • MRAM Technology Description and Overview
    • Early MRAM Integrated Circuits
    • Pseudo Spin Valve MRAM Devices
    • Spin-Dependent Tunneling MRAM Devices
    • 2-D Vs. 1-D Memory Cell Switching
    • Magnetic Tunnel Junction MRAM Devices
  • Semiconductor Memory Technology Comparisons
    • Choosing a Semiconductor Memory Technology
    • Existing and Emerging Memory Technologies
  • MRAM Market Opportunity
    • MRAM as a Disruptive Technology
    • Memory Market Creation Strategies
  • MRAM Players
    • Altis Semiconductor
    • Crocus Technology
    • Defense Advanced Research Projects Agency
    • Freescale Semiconductor
    • Grandis
    • Honeywell
    • NVE
    • Silicon Magnetic Systems
    • NEC/Toshiba
    • Samsung Advanced Institute of Technology
    • TSMC/Electronics Research and Service Organization/Industrial Technology Research Institute
  • Glossary of Terms

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